montanajnr.blogg.se - 2n3906 download

Therefore, there are some 2N3906 with improved specifications. It is worth bearing in mind the constant improvement of component designs by manufacturers.

temperature: crystal T J (T K) up to 150 ☌ T STG storage (T XP.) possible working T AMB (T RAB.) – 55 … 150 ☌.

the maximum possible power of the R S (Р k max) = 500 mW.

short-term collector current maximum I CP (I k peak) = -200 mA.

maximum allowable DC collector current I C (I k max) = -100 mA.

the voltage between the emitter and the base is the maximum possible V EBO (U eb max) = -5 V.voltage between collector and emitter maximum allowable V CEO (U ke max) = -40 V.the voltage between the collector and the base is maximum V CBO (U kb max) – 40 V.The values of these parameters must not be exceeded: They are designed for ambient temperatures up to +25☌. The maximum permissible specifications of the transistor, all known manufacturers, are specified at the very beginning of the technical description.

These plastic packages, with three short pins, are designed for surface mount (SMD) applications. Fairchild Semiconductor has them in SOT-223. Fairchild Semiconductor, Jiangsu Changjiang Electronics Technology, Daya Electric Group, General Semiconductor, Silicon Standard, Daya Electric Group, GUANGDONG HOTTECH INDUSTRIAL, SHENZHEN KOO CHIN ELECTRONICS also produce this product in SOT-23.